^pioducti, una. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 IRF530 14a, 100v, 0.160 ohm, n-channel power mosfets these are n-channel enhancement mode silicon gate power field effect transistors. they are advanced power mosfets designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. all of these power mosfets are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. these types can be operated directly from integrated circuits. features ? 14a, 100v ' rds(on) = 0 ? single pulse avalanche energy rated ? soa is power dissipation limited ? nanosecond switching speeds ? linear transfer characteristics ? high input impedance ordering information part number IRF530 package to-220ab brand IRF530 note: when ordering, use the entire part number. symbol o d go 6 s packaging jedec to-220ab drain (flange) source drain gate nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verity that datasheets are current before placing orders. quality semi-conductors
IRF530 absolute maximum ratings tc = 25c, unless otherwise specified drain to source breakdown voltage (note 1) vds drain to gate voltage (rgs = 20kl3) (note 1) vdgr continuous drain current id tc = 100c id pulsed drain current (note 3) idm gate to source voltage vg maximum power dissipation pd dissipation derating factor single pulse avalanche energy rating (note 4) eas operating and storage temperature tj tstg maximum temperature for soldering leads at 0.063in (1.6mm) from case for 10s t|_ package body for 10s, see techbrief 334 tp^g caution: stresses above those listed in "absolute maximum ratings" may cause permanent damage to the device. this is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. IRF530 100 100 14 10 56 20 79 0.53 69 -55 to 175 300 260 units v v a a a v w w/c mj c c c note: = 25cto150c. electrical specifications tc = 25c, unless otherwise specified parameter drain to source breakdown voltage gate to threshold voltage zero gate voltage drain current on-state drain current (note 2) gate to source leakage current drain to source on resistance (note 2) forward transconductance (note 2) turn-on delay time rise time turn-off delay time fall time total gate charge (gate to source + gate to drain) gate to source charge gate to drain "miller" charge input capacitance output capacitance reverse transfer capacitance internal drain inductance internal source inductance thermal resistance junction to case thermal resistance junction to ambient symbol bvdss vgs(th) bss 'd(on) !gss rds(on) 9fs 'd(on) tr ld(off) tf q9(tot) qgs qgd ciss cqss crss ld ls r8jc r6ja test conditions id = 250ua vgs = ov (figure 10) vgs = vds. id = 250ua vds = 95v, vgs = ov vds = 0-8 x rated bvrjss. vgs = ov, tj = 150c vds * b(on) x rds(on) max. vgs = 10v vgs = 2ov id = 8.3a, vgs = 10v (figures 8, 9) vds ^ 50v. !d = 8-3a (figure 12) vdd = 50v, id = 14a, rg = mosfet switching times independent of operating 1 vgs = 10v, id = 14a, vds ig(ref) = 1.5ma (figure 14 gate charge is essentially operating temperature 1213, rl = 3.413 are essentially emperature = 0.8 x rated bvdss ) ndependent of vds = 25v. vgs = ov, f = 1 mhz (figure 1 1 ) measured from the contact screw on tab to center of die measured from the drain lead, 6mm (0.25in) from package to center of die measured from the source lead, 6mm (0.25in) from header to source bonding pad modified mosfet symbol showing the internal devices inductances free air operation win 100 2 - - 14 - - 5.1 - - - - - - - - - - - - ~ typ - - - - - - 0.14 7.6 12 35 25 25 18 4 7 600 250 50 3.5 4.5 7.5 - - " max - 4,0 25 250 - 500 0.16 - 15 65 70 59 30 - - - - - 1.9 62.5 " units v v ma ma a na 3 s ns ns ns ns nc nc nc pf pf pf nh nh nh c/w c/w -
IRF530 source to drain diode specifications parameter continuous source to drain current pulse source to drain current (note 2) source to drain diode voltage (note 2) reverse recovery time reverse recovery charge symbol isd !sdm vsd trr qrr test conditions modified mosfet symbol showing the integral reverse p-n junction diode jfc g o u 1 i i > d ^) y ,s tj = 25c, isd = 14a, vgs = 0v (figure 13) tj = 25c, isd = 14a, dlsd/c|t = 100a/|is tj = 25c, isd = 14a- d!sd/dt = 100a/u.s min - - 5.5 0.17 typ - - 120 0.6 max 14 56 2.5 250 1.3 units a a v ns uc notes: 2. pulse test: pulse width < 300ns, duty cycle < 2%. 3. repetitive rating: pulse width limited by max junction temperature. see transient thermal impedance curve (figure 3). 4. vdd = 25v, starting tj = 25c, l = 530nh, rg = 25h, peak ias = 14a (figures 15, 16). typical performance curves umess otherwise specified 1.2 1.0 a i 0.8 g 0.6 0.4 0 25 50 75 100 125 150 175 tc, case temperature (c) figure 1. normalized power dissipation vs case temperature 50 75 100 125 150 tc, case temperature (c) 175 figure 2. maximum continuous drain current vs case temperature 10 tp, rectangular pulse duration (s)
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